SAVANTIC 2SB965

SavantIC Semiconductor
Product Specification
2SB965
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD1288
APPLICATIONS
·For use in low frequency and
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
-7
A
70
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB965
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
-2.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
µA
hFE -1
DC current gain
IC=-1A ; VCE=-5V
60
hFE -2
DC current gain
IC=-4A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
150
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
75
MHz
hFE-1 classifications
R
Q
P
60-120
100-200
160-320
2
MIN
TYP.
MAX
-120
UNIT
V
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SB965