SAVANTIC 2SD555

SavantIC Semiconductor
Product Specification
2SD555
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
·Complement to type 2SB600
APPLICATIONS
·For high speed ,high current ,high power
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
5
V
10
A
200
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
VALUE
1.46
UNIT
/W
SavantIC Semiconductor
Product Specification
2SD555
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=2A
5.0
V
Base-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=5V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
300
pF
Transition frequency
IC=1A ; VCE=10V
15
MHz
VBEsat
fT
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD555