SavantIC Semiconductor Product Specification 2SC4370 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SA1659 ·High transition frequency APPLICATIONS ·High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IB Base current 0.15 A PC Collector dissipation 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4370 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.0 V ICBO Collector cut-off current VCB=160V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE DC current gain IC=0.1A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V 100 MHz Collector output capacitance f=1MHz;VCB=10V 25 pF fT COB CONDITIONS hFE Classifications O Y 70-140 120-240 2 MIN TYP. MAX 160 UNIT V 70 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SC4370