SavantIC Semiconductor Product Specification 2SD665 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 4 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD665 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 300 pF fT Transition frequency IC=1A ; VCE=5V 15 MHz hFE Classifications O R 40-80 70-140 2 MIN TYP. MAX 200 UNIT V 40 140 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD665