SavantIC Semiconductor Product Specification 2SD1763 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2 A ICM Collector current-Peak 3 A PC Collector power dissipation 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1763 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=50µA , IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.4 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE DC current gain IC=0.1A ; VCE=5V fT Transition frequency IE=-0.1A ; VCE=5V 80 MHz Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 20 pF hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1763