Inchange Semiconductor Product Specification 2SB676 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ・DARLINGTON APPLICATIONS ・For switching applications ・Hammer drive, pulse motor drive applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -4 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB676 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -20 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.5 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 -80 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time VCE=-30V, IB1=-IB2=-6mA RL=10Ω 2 0.15 μs 0.80 μs 0.40 μs Inchange Semiconductor Product Specification 2SB676 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3