Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 4 A 0.5 A 20 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 80 UNIT V Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=6mA VCC=30V ,RL=10Ω Fall time 2 0.2 μs 1.5 μs 0.6 μs Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3