ISC 2SD1414

Inchange Semiconductor
Product Specification
2SD1414
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1024
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector -emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
4
A
0.5
A
20
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1414
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=6mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.5
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
2000
hFE-2
DC current gain
IC=3A ; VCE=2V
1000
80
UNIT
V
Switching times
ton
Turn-on time
tstg
Storage time
tf
IB1=-IB2=6mA
VCC=30V ,RL=10Ω
Fall time
2
0.2
μs
1.5
μs
0.6
μs
Inchange Semiconductor
Product Specification
2SD1414
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3