SavantIC Semiconductor Product Specification MJE13004 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 4 A ICM Collector current-Peak 8 A IB Base current 2 A IBM Base current-PeaK 4 A PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 Ta=25 2 TC=25 75 W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification MJE13004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=2A; IB=0.5A 0.6 V VCE(sat)-3 Collector-emitter saturation voltage IC=4A;IB=1A 1.0 V VBE(sat)-1 Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V VBE(sat)-2 Base-emitter saturation voltage IC=2A ;IB=0.5A 1.6 V ICEV Collector cut-off current VCEV=600V; VBE=1.5V TC=100 1.0 5.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 60 hFE-2 DC current gain IC=2A ; VCE=5V 8 40 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 4 Collector outoput capacitance IE=0; f=1MHz ; VCB=10V fT COB CONDITIONS MIN TYP. MAX 300 UNIT V MHz 65 pF Switching times td Delay time tr Rise time ts Storage time tf Fall time VCC=125V ,IC=2A IB1=-IB2=0.4A tp=25µs;duty cycleD1% 2 0.1 µs 0.7 µs 4.0 µs 0.9 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 MJE13004