SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 12 A ICM Collector current-Peak 24 A IE Emitter current 18 A IEM Emitter current-Peak 36 A IB Base current 6 A IBM Base current-Peak 12 A PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 Ta=25 2 TC=25 100 W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=1.6A TC=100 1.5 2.0 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=3A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5A; IB=1A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=1.6A TC=100 1.6 1.5 V ICEV Collector cut-off current VCEV=Rated value, VBE(off)=1.5V dc;TC=100 1.0 5.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 8 40 hFE-2 DC current gain IC=8A ; VCE=5V 6 30 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 4 Collector outoput capacitance IE=0; f=0.1MHz ; VCB=10V fT COB CONDITIONS MIN TYP. MAX 400 UNIT V MHz 180 pF Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time VCC=125V ,IC=8A IB1=-IB2=1.6A tp=25µs duty cycleC1% 2 0.06 0.1 µs 0.45 1.0 µs 1.30 3.0 µs 0.20 0.7 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 MJE13009 SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 MJE13009