Inchange Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A IB Base current 4 A IBM Base current-Peak 8 A IE Emitter current 12 A IEM Emitter current-Peak 24 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1.0A TC=100℃ 2.0 3.0 V VCEsat-3 Collector-emitter saturation voltage IC=8A ;IB=2.0A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=5A ;IB=1.0A TC=100℃ 1.6 1.5 V ICBO Collector cut-off current VCB=700V; IE=0 TC=125℃ 0.1 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 8 40 hFE-2 DC current gain IC=5A ; VCE=5V 5 30 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 4 Collector outoput capacitance IE=0; f=0.1MHz ; VCB=10V fT COB CONDITIONS MIN TYP. MAX 400 UNIT V MHz 80 pF Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time VCC=125V ,IC=5A IB1=-IB2=1.0A tp=25μs duty cycle≤1% 2 0.1 μs 1.5 μs 3.0 μs 0.7 μs Inchange Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 Inchange Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors 4 Inchange Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors 5