SavantIC Semiconductor Product Specification MJL21193 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type MJL21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Fig.1 simplified outline (TO-3PL) and symbol Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -400 V VCEO Collector-emitter voltage Open base -250 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -16 A ICM Collector current-peak -30 A IB Base current -5 A PD Total power dissipation 200 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification MJL21193 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-100mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V VCE(sat)-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V VBE(ON) Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V -100 µA ICEO Collector cut-off current VCE=-200V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-8A ; VCE=-5V 25 hFE-2 DC current gain IC=-16A ; VCE=-5V 8 Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 Collector output capacitance f=1MHz;VCB=-10V,IE=0 fT COB CONDITIONS 2 MIN TYP. MAX -250 UNIT V 75 MHz 500 pF SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 MJL21193