Inchange Semiconductor Product Specification MJ15003 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15004 ・Excellent safe operating area APPLICATIONS ・For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 5 A IE Emitter current -25 A PD Total power dissipation 250 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.7 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ15003 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBE Base-emitter on voltage IC=5A ; VCE=2V 2.0 V ICEO Collector cut-off current VCE=140V; IB=0 0.25 mA ICEX Collector cut-off current VCE=140V; VBE(off)=1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=2V 25 VCE=50Vdc,t=1 s, Nonrepetitive 5 Is/b Second breakdown collector current With base forward biased 140 UNIT V 150 A VCE=100Vdc,t=1 s, Nonrepetitive COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz fT Transition frequency IC=0.5A ; VCE=10V;f=0.5MHz 2 1 1000 2 pF MHz Inchange Semiconductor Product Specification MJ15003 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3