MJ15022 MJ15024

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15022 MJ15024
DESCRIPTION
·With TO-3 package
·Complement to type MJ15023; MJ15025
·Excellent safe operating area
·High DC current gain
hFE = 15 (Min) @ IC = 8 Adc
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
MJ15022
Open emitter
MJ15024
MJ15022
VALUE
350
UNIT
V
400
Open base
MJ15024
200
V
250
Open collector
5
V
IC
Collector current
16
A
ICM
Collector current-peak
30
A
IB
Base current
5
A
PD
Total power dissipation
250
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.70
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15022 MJ15024
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
MJ15022
MIN
TYP.
MAX
UNIT
200
IC=0.1A ;IB=0
V
250
MJ15024
VCE(sat)-1
Collector-emitter saturation voltage
IC=8A; IB=0.8A
1.4
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=16A; IB=3.2A
4.0
V
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
2.2
V
ICEO
Collector
cut-off current
0.5
mA
0.25
mA
0.5
mA
ICEX
Collector
cut-off current
MJ15022
VCE=150V; IB=0
MJ15024
VCE=200V; IB=0
MJ15022
VCE=200V; VBE(off)=1.5V
MJ15024
VCE=250V; VBE(off)=1.5V
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
15
hFE-2
DC current gain
IC=16A ; VCE=4V
5
Is/b
Second breakdown collector
current with base forward biased
VCE=50Vdc,t=0.5 s,
VCE=80Vdc,t=0.5 s,Nonrepetitive
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
fT
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
2
60
5.0
2.0
A
500
4
pF
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15022 MJ15024
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15022 MJ15024
4