2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G H J A A B C D E F G H J K B Collector REF. D K E C F Base Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 140 V Emitter to Base Voltage VEBO 5 V IC 0.6 A Collector Current - Continuous Collector Power Dissipation PC 625 mW RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 160 - - V IC= 0.1mA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 140 - - V IC= 1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE= 0.01mA, IC = 0A Collector Cut-Off Current ICBO - - 0.05 μA VCB= 120V, IE = 0 A Emitter Cut-Off Current IEBO - - 0.05 μA DC Current Gain hFE 175 - 500 VEB= 4V, IC =0 mA VCE= 5V, IC= 10mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V Base to Emitter Saturation Voltage VBE(sat) - - 1 V IC= 50mA, IB= 5mA Base to Emitter Voltage VBE - - 0.8 V VCE= 5V, IC= 1mA Collector output capacitance Cob - - 4 pF fT 100 - - MHz Transition frequency IC= 50mA, IB= 5mA VCB= 10V, IE= 0 mA, f=1MHz VCE= 10V, IC= 1mA , f=100MHz . http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 1