2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching and Amplification TO-92 G H Emitter Collector Base J CLASSIFICATION OF hFE A Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL Range 40~80 60~120 90~180 D Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B A B C D E F G H J K K E C F Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 4 V IC 20 mA Collector Current - Continuous Collector Power Dissipation PC 250 mW RθJA 500 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 20 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=30V, IE=0 Collector Cut – Off Current ICEO - - 0.1 μA VCE=20V, IB=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=3V, IC=0 DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 21-Feb-2011 Rev. A Test Conditions hFE 40 - 180 VCE(sat) - - 0.3 V VCE=6V, IC=1mA IC=10mA, IB=1mA VBE 0.65 - 0.77 V VCE=6V, IC=1mA fT 400 - - MHz VCE=6V, IC=1mA Cob - - 1.3 pF VCB=6V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1