MPSA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. A D B E C G H Collector 3 J 2 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 F 1Emitter 2Base 3Collector REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Rating Unit Collector to Base Voltage Parameter VCBO -80 V Collector to Emitter Voltage VCEO -80 V Emitter to Base Voltage VEBO -4 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 625 mW RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO -80 - - V IC= -100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -80 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -4 - - V IE= -100µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -80V, IE=0 Collector Cut-Off Current ICEO - - -0.1 µA VCE= -60V, IB=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -4V, IC=0 hFE (1) 100 - - VCE= -1V, IC= -10mA hFE (2) 100 - - VCE= -1V, IC= -100mA DC Current Gain Test Condition Collector to Emitter Saturation Voltage VCE(sat) - - -0.25 V IC= -100mA, IB= -10mA Base to Emitter Voltage VBE(sat) - - -1.2 V IC= -100mA, VCE= -1V fT 50 - - MHz VCE= -1V, IC= -100mA, f=100MHz Transition Frequency http://www.SeCoSGmbH.com/ 9-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1