SECOS 2SB624

2SB624
-0.7A , -30V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES


High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)
Complimentary to 2SD596
A
L
3
3
C B
Top View
MARKING
1
1
Product-Rank
2SB624-BV1
2SB624-BV2
2SB624-BV3
Range
110~180
135~220
170~270
Product-Rank
2SB624-BV4
2SB624-BV5
Range
200~320
250~400
K
2
E
2
D
F
G
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-23
3K
7’ inch
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
Collector



Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-30
-25
-5
-700
200
150, -55~150
V
V
V
mA
mW
°C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Parameter
V(BR)CBO
-30
-
-
V
IC= -100A, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-25
-
-
V
IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE= -100A, IC=0
Collector Cut-off Current
ICBO
-
-
-0.1
A
VCB= -30V, IE=0
Emitter Cut-off Current
IEBO
-
-
-0.1
A
VEB= -5V, IC=0
hFE (1)*
110
-
400
VCE= -1V, IC= -100mA
hFE (2)*
50
-
-
VCE= -1V, IC= -700mA
VCE(sat) *
-
-
-0.6
V
IC= -700mA, IB= -70mA
-0.6
-
-0.7
V
VCE= -6V, IC= -10mA
fT
-
160
-
MHz
VCE= -6V, IC= -10mA
Cob
-
17
-
pF
DC Current Gain
Collector to Emitter
Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
VBE
*
Test Conditions
VCB= -6V, IE=0, f=1MHz
*Pulse test：Pulse width ≦ 350 s, Duty Cycle ≦ 2%.
http://www.SeCoSGmbH.com/
15-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
2SB624
Elektronische Bauelemente
-0.7A , -30V
PNP Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
15-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2