2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 A L 3 3 C B Top View CLASSIFICATION OF hFE 1 1 Product-Rank 2SA1611-M4 2SA1611-M5 Range 90~180 135~270 Marking M4 M5 Product-Rank 2SA1611-M6 2SA1611-M7 Range 200~400 300~600 Marking M6 M7 K 2 E 2 D F H G REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 PACKAGE INFORMATION J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector Package MPQ LeaderSize SOT-323 3K 7’ inch Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -60 -50 -5 -100 150 833 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -100A, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100A, IC=0 Collector Cut-off Current Emitter Cut-off Current ICBO IEBO - - -100 -100 nA nA VCB= -60V, IE=0 VEB= -5V, IC=0 DC Current Gain hFE 90 - 600 VCE(sat) - - -0.3 V IC= -100mA, IB= -10mA VBE -0.58 - -0.68 V VCE= -6V, IC= -1mA fT - 180 - MHz VCE= -6V, IC= -10mA Cob - 4.5 - pF Collector to Emitter Saturation Voltage Collector to Emitter Voltage Transition Frequency Collector Output Capacitance Test Conditions VCE= -6V, IC= -1mA VCB= -10V, IE=0, f=1MHz *Pulse test：pulse width ≦ 350s, duty cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ 26-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1