2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G H APPLICATIONS Capable of being used in the low frequency to high frequency range. Emitter Collector Base J A D 160~320 A B C D E F G H J K K Product-Rank 2SA608N-F 2SA608N-G Range REF. B CLASSIFICATION OF hFE 280~560 E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -60 -50 -6 -0.15 500 250 150, -55~150 V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob -60 -50 -6 160 70 - 200 4.5 -0.1 -0.1 560 -0.3 -1 - V V V μA μA Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 26-Jan-2011 Rev. A V V MHz pF Test condition IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -40V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA VCE= -6V, IC= -0.1mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -6V, IC= -10mA VCB= -6V, IC= 0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1