2SC1359 0.03 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Optimum for RF Amplification of FM/AM Radios High Transition Frequency fT TO-92 G H Emitter Collector Base J A CLASSIFICATION OF hFE Product-Rank 2SC1359-B 2SC1359-C Range 70~140 110~220 D B REF. C A B C D E F G H J K K E F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 30 mA Collector Power Dissipation PC 400 mW RθJA 312 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 20 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=10V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA DC Current Gain hFE 70 - 220 VEB=5V, IC=0 VCE=10V, IC=1mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V IC=15mA, IB=1.5mA Base to Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=15mA, IB=1.5mA fT 150 - - MHz Transition Frequency http://www.SeCoSGmbH.com/ 21-Feb-2011 Rev. A VCE=10V, IC=1mA, f=200MHz Any changes of specification will not be informed individually. Page 1 of 1