SECOS 2SA965TM

2SA965TM
-0.8A , -120V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92MOD
FEATURES
Complementary to 2SC2235
Power Amplifier Applications
A
D
B
CLASSIFICATION OF hFE
Product-Rank
2SA965-O
2SA965-Y
Range
80-160
120-240
K
E
F
C
N
G
H
1 Emitter
2 Collector
3 Base
M
Collector
J
L
2
Millimeter
Min.
Max.
5.50
6.50
8.00
9.00
12.70
14.50
4.50
5.30
0.35
0.65
0.30
0.51
1.50 TYP.
REF.
A
B
C
D
E
F
G
3
Base
1
Emitter
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.70
2.05
2.70
3.20
0.85
1.15
1.60 Max
0.00
0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction To Ambient
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-120
-120
-5
-0.8
0.9
139
150, -55~150
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
-120
-120
-5
80
-
120
-
-0.1
-0.1
240
-1
-1
40
V
V
V
µA
µA
http://www.SeCoSGmbH.com/
17-Aug-2011 Rev. A
V
V
MHz
pF
Test Conditions
IC= -1mA, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -120V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -0.5A
VCE= -5V, IC= -100mA
VCB= -10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
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