SECOS BC817

BC817 -16, -25, -40
500 mA, 50 V
NPN Plastic Encapsulate Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
SOT-23
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
A
Collector
3
L
3
3
C B
Top View
1
1
1
Base
2
K
2
E
2
D
Emitter
F
H
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
SYMBOL
RATINGS
UNIT
Collector - Base Voltage
PARAMETER
VCBO
50
V
Collector - Emitter Voltage
VCEO
45
V
Emitter - Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
300
mW
TJ, TSTG
150, -55 ~ +150
°C
Junction & Storage Temperature
CHARACTERISTICS at TA = 25°C
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-base Breakdown Voltage
VCBO
50
-
-
V
IC = 10 µA, IE = 0
Collector-emitter Breakdown Voltage
VCEO
45
-
-
V
IC = 10 mA, IB = 0
Emitter-base Breakdown Voltage
VEBO
5
-
-
V
IE = 1 µA, IC = 0
Collector Cut-off Current
ICBO
-
-
0.1
µA
VCB = 45V, IE = 0
µA
VEB = 4V, IC = 0
Emitter Cut-off Current
IEBO
-
-
0.1
DC Current Gain
hFE(1)
100
-
600
DC Current Gain
TEST CONDITIONS
VCE = 1 V, IC = 100 mA
hFE(2)
40
-
-
Collector-emitter Saturation Voltage
VCE(sat)
-
-
0.7
V
IC = 500mA, IB = 50 mA
VCE = 1 V, IC = 500 mA
Base-emitter Saturation Voltage
VBE(sat)
-
-
1.2
V
IC = 500mA, IB = 50 mA
Base-emitter Voltage
VBE
-
-
1.2
V
VCE = 1V, IC = 500mA
Collector Capacitance
Cob
-
10
-
pF
VCB = 10V, f=1MHz
Transition Frequency
fT
100
-
-
MHz
VCE = 5 V, IC = 10 mA,
f = 100MHz
CLASSIFICATION OF hFE(1)
Rank
BC817-16
BC817-25
BC817-40
Range
100 - 250
160 - 400
250 - 600
Marking
6A
6B
6C
16-Nov-2009 Rev. D
Page 1 of 2
BC817 -16, -25, -40
Elektronische Bauelemente
500 mA, 50 V
NPN Plastic Encapsulate Transistors
CHARACTERISTIC CURVES
16-Nov-2009 Rev. D
Page 2 of 2