S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 Complementary to S9015W A L 3 3 C B Top View 1 1 PACKAGING INFORMATION K 2 E 2 Weight: 0.0074 g D Collector F 3 REF. MARKING CODE 1 A B C D E F Base J6 2 Emitter H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 50 45 5 100 200 +150, -55 ~ +150 V V V mA mW ℃ Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Transition Frequency Symbol Min. Typ. Max. Unit Test Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VCE(sat) VBE(sat) hFE fT 50 45 5 - - 100 100 100 300 1000 1000 - V V V nA nA nA mV mV IC = 100μA, IE = 0 IC = 0.1mA, IB = 0 IE = 100μA, IC = 0 VCB = 50 V, IE = 0 VCE = 35V, IB = 0 VEB = 3V, IC = 0 IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA, f = 30MHz 200 150 MHz CLASSIFICATION OF hFE 01-June-2002 Rev. A Rank L H hFE 200 - 450 450 - 1000 Page 1 of 2 S9014W Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2