SECOS 2SD602A

2SD602, 602A
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z
z
z
SOT-23
3 Collector
For general amplification
Complementary to 2SB710 and 2SB710A
Low collector to emitter saturation voltage VCE(sat)
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
1
Base
MARKING CODE
2SD602:
2SD602A:
Dim
2
Emitter
A
WQ1, WR1, WS1
XQ, XR, XS
L
3
B S
Top View
1
V
J
K
2
C
G
H
D
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
2SD602
Collector to Base Voltage
2SD602A
2SD602
Collector to Emitter Voltage
2SD602A
Emitter to Base Voltage
Junction, Storage Temperature
Unit
30
VCBO
V
60
25
VCEO
V
50
VEBO
5
V
IC
500
mA
Pc
200
mW
TJ, TSTG
+150, -55 ~ +150
℃
Collector Currrent
Total Power Dissipation
Ratings
CHARACTERISTICS at Ta = 25°C
PARAMETER
TEST CONDITIONS
SYMBOL
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
2SD602
2SD602A
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
2SD602
2SD602A
V(BR)CEO
MIN.
30
60
25
50
TYP.
MAX.
UNIT
-
-
V
-
-
V
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
V
Collector Cutoff Current
VCE = 20V, IB = 0
ICEO
-
-
0.1
μA
Emitter Cutoff Current
VEB = 5V, IC = 0
IEBO
-
0.1
μA
Collector-Emitter Saturation Voltage
(pulse test)
IC = 300mA, IB = 30mA
VCE(sat)
-
-
0.6
V
VCE = 10 V, IC = 150 mA
hFE(1)
85
-
340
VCE = 10 V, IC = 500 mA
hFE(2)
40
-
-
fT
-
200
-
MHz
COB
-
-
15
pF
DC Current Gain (pulse test)
Transition Frequency
VCE = 10V, IC = 50mA, f = 200MHz
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
CLASSIFICATION OF hFE1
Rank
Range
01-June-2005 Rev. A
2SD602
2SD602A
Q
85 - 170
85 - 170
R
120 - 240
120 - 240
S
170 - 340
170 - 340
Page 1 of 2
2SD602, 602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2005 Rev. A
Page 2 of 2