BD439/BD441 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 3.2±0.2 8.0±0.2 2.0±0.2 * Amplifier and switching applications 4.14±0.1 O2.8±0.1 11.0±0.2 O3.2±0.1 1.4±0.1 1 2 3 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Paramete Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value BD439 60 BD441 80 BD439 60 BD441 80 V 5 V IC Collector Current –Continuous 4 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 o Tstg Storage Temperature -55-150 o Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test 0.76±0.1 2.28 Typ. Emitter-Base Voltage Parameter 4.55±0.1 C Dimensions in Millimeters C unless otherwise Ic=100μA,IE=0 MIN BD439 BD441 Ic=100mA,IB=0 BD439 BD441 IE=100μA,IC=0 VCB=60V,IE=0 BD439 VCB=80V,IE=0 BD441 Emitter cut-off current IEBO VEB=5V,IE=0 hFE(1) VCE=1V,IC=500mA hFE(3) specified） conditions ICBO DC current gain 0.5± 0.1 1: Emitter 2: Collector 3: Base Collector cut-off current hFE(2) 15.3±0.2 V VEBO ELECTRICAL CHARACTERISTICS（Tamb=25℃ 1.27±0.1 Units VCE=5V,IC=10mA VCE=1V,IC=2A MAX UNIT 60 80 V 60 80 V 5 V 40 BD439 20 BD441 15 BD439 25 15 BD441 TYP 100 μA 1 mA 475 VCE(sat) IC=3A,IB=0.3A 0.8 V Base-emitter voltage VBE VCE=1V,IC=2A 1.1 V Transition frequency fT Collector-emitter saturation voltage http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A VCE=1V,IC=250mA 3 MHz Any changing of specification will not be informed individual Page 1 of 2 BD439/BD441 Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A NPN Type Plastic Encapsulate Transistors BD439，441 Any changing of specification will not be informed individual Page 2of 2