2SC2235 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 MOD FEATURES Complementary to 2SA965 4.9 ±0.2 8.6±0.2 6.0±0.2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B VCEO B B Collector-Base Voltage 120 V Collector-Emitter Voltage 120 V 5 V 0.8 A B Emitter-Base Voltage B Collector Current -Continuous IC B Units B B VEBO B Value B PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Storage Temperature -55to+150 ℃ B B B B Tstg B B 1.0±0.1 14 ±0.2 VCBO Parameter 2.0 +0.3 –0.2 Symbol 0.45 +0.1 –0.1 0.50 +0.1 –0.1 (1.50 Typ.) 1.9 +0.1 –0.1 1 2 3 3.0 ±0.1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Test Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-Base breakdown voltage V(BR)EBO B B B B B conditions MIN TYP MAX UNIT IC=1mA,IE=0 120 V IC=10mA,IB=0 120 V IE=1mA,IC=0 5 V B B Unit: mm unless otherwise specified) Symbol Parameter 1: Emitter 2: Collector 3: Base B B B B B B B B B B B Collector cut-off current ICBO VCB=120V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=100mA B B B B B B B B B B B B B B B B B 80 B 240 VCE(sat) IC=500mA,IB=50mA 1.0 V Base-emitter voltage VBE IC=500mA, VCE=5V 1.0 V Transition frequency fT VCE=5V, IC=100mA Collector-emitter saturation voltage B B B B B B B B B CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com/ 17-May-2007 Rev. A Cob B B B B B B B B 120 VCE=10V, IE=0 B Collector output capacitance B B B MHz B 30 f=1MHz pF hFE O Y 80-160 120-240 Any changing of specification will not be informed individual Page 1 of 2 2SC2235 Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com/ 17-May-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2