2N4403 PNP Transistor Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power Dissipation Symbol Parameter VCBO Value Units Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC * Collector Power dissipation 0.625 TJ Junction Temperature 150 o Tstg Storage Temperature -55to +150 o RθJA Thermal Resistance, junction to Ambient Parameter Symbol 0.43 +0.08 –0.07 0.46 +0.1 –0.1 W (1.27 Typ.) C +0.2 1.25–0.2 C 357 ELECTRICAL CHARACTERISTICS (Tamb=25 oC 14.3 ±0.2 MAXIMUM RATINGS* TA=25 oC unless otherwise noted 1 2 3 C /mW o unless Test 1: Emitter 2: Base 3: Collector 2.54 ±0.1 otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -6 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-150mA 100 hFE(5) VCE=-2V,IC=-500mA 20 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA,IB=-15mA -0.95 V VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Transition frequency fT Collector capacitance Cob -0.75 VCE=-10V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=100KHz MHz 200 8.5 pF 15 nS Delay time td Rise time tr VCC=-30V, IC=-150mA 20 nS Storage time tS IB1=- IB2=-15mA 225 nS Fall time tf 30 nS http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2N4403 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A PNP Transistor Plastic-Encapsulate Transistors Any changing of specification will not be informed individual Page 2 of 3 2N4403 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A PNP Transistor Plastic-Encapsulate Transistors Any changing of specification will not be informed individual Page 3 of 3