SECOS 2SA1020

2SA1020
PNP Transistor
Elektronische Bauelemente
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
T O-92 MOD
4.9 ±0.2
8.6±0.2
6.0±0.2
FEATURE
Power Amplifier Applications
Symbol
o
Ta=25 C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
-50
Collector Current
-2
V
V
A
Total Power Dissipation
900
mW
IC
PD
TJ,Tstg
Parameter
-5
Junction and Storage Temperature
-55~+150
14 ±0.2
MAXIMUM RATINGS
2.0 +0.3
–0.2
1.0±0.1
0.45 +0.1
–0.1
0.50 +0.1
–0.1
(1.50 Typ.)
1.9 +0.1
–0.1
C
O
1 2 3
3.0 ±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
-50
-50
-5
-
-1
uA
Emitter-Base Cutoff Current
I CBO
I EBO
Typ.
-
-
-
-1
uA
Collector Saturation Voltage
VCE(sat)
VBE(sat)
-
-0.5
Base Satruation Voltage
-
V
V
70
-
100
240
40
-
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
hFE1
fT
Cob
Max
-
-1.2
-
Unit
V
V
V
Test Conditions
I C=-100µA,IE=0
I C=-1mA,IB=0
I E=-100µA,IC=0
VCB=-50V,IE=0
VBE=-5 V,IC=0
I C=- 1A,IB=-50mA
I C=- 1 A,IB=- 50mA
VCE=-2 V, I C=- 500A
MH z
pF
VCE=-2 V, IC=- 500mA
VCB=-10 V , f=1MHz
Classification of hFE1
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
O
Y
70~140
120~240
Any changing of specification will not be informed individual
Page 1 of 3
2SA1020
PNP Transistor
Elektronische Bauelemente
Typical Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Plastic-Encapsulate Transistors
2SA1020
Any changing of specification will not be informed individual
Page 2 of 3
2SA1020
PNP Transistor
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Plastic-Encapsulate Transistors
Any changing of specification will not be informed individual
Page 3 of 3