2SC3279 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.55±0.2 +0.2 4.5±0.2 High DC current gain and excellent hFE linearity (1.27 Typ.) Low saturation voltage 1.25–0.2 1 2 3 14.3 ±0.2 2.54 ±0.1 1: Emitter 2: Collector 3: Base 0.43 +0.08 –0.07 0.46 +0.1 –0.1 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Current Continuous IC 2 A Collector Power Dissipation PC 750 mW TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 10 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 V Collector Cut-off Current ICBO VCB = 30V, IE = 0 0.1 A Emitter Cut-off Current IEBO VEB = 6V, IC = 0 0.1 A DC Current Gain hFE VCE = 1V, IC = 0.5A VCE(sat) IC = 2A, IB = 100mA 0.82 V Base-Emitter Voltage VBE IC = 2A, VCE = 1V 1.5 V Collector Power Dissipation Cob VCB = 10V, IE = 0, f = 1MHz 27 pF fT VCE = 1V, IC = 0.5A 150 MHz Collector-Emitter Saturation Voltage Transition Frequency Typ 140 Max Units 600 CLASSIFICATION OF hFE Rank L M N P Range 140-240 200-330 300-450 420-600 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SC3279 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2