2SA1036K PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SC-59 A L FEATURES S 2 n n n RoHS Compliant Product Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 3 Top View Dim Min Max B 1 D G J C K H COLLECTOR MARKING : HP, HQ, HR BASE * A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm EMITTER MAXIMUM RATINGS* TA=25 C unless otherwise noted O Symbol Value Parameter Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature ℃ -55~150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 µA DC current gain hFE VCE=-3V,IC=-10mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A VCE(sat) Cob 82 390 IC=-100mA,IB=-10mA -0.4 VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz V 200 MHz 7 pF hFE P Q R 82 - 180 120 - 270 180 - 390 Any changing of specification will not be informed individual Page 1 of 2 2SA1036K Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2002 Rev. A Page 2 of 2