2SC5343 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 * Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ) +0.2 1.25–0.2 1 2 3 2.54 ±0.1 14.3 ±0.2 * Low Noise: NF=1Db(Typ). At f=1KHz 1: Emitter 2: Collector 3: Base 0.43 +0.08 –0.07 0.46 +0.1 –0.1 ABSOLUTE MAXIMUM RATINGS (1.27 Typ.) 4.5±0.2 FEATURES o Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 50 Collector Current 150 V V mA 50 mA IC IB PD TJ,Tstg 5 Base Current-Continuous Total Power Dissipation 0.2 -55~+150 Junction and Storage Temperature W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Emitter-Base Cutoff Current Symbol B(BR)CBO B(BR)CEO B(BR)EBO I CBO I EBO Collector Saturation Voltage VCE(sat) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Min 60 50 5 - DC Current Gain hFE1 Gain-Bandwidth Product Output Capacitance fT Cob 70 80 - Noise Figure NF - CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Typ. - Max - Unit V V V 0.1 0.1 0.1 - 0.25 700 3.5 uA uA V MH z pF - 10 dB Test Conditions I C=100µA,IE=0 I C=10mA,IB=0 I E=10µA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 I C=100mA,IB=10mA VCE= 6 V, I C= 2mA VCE= 10 V, IC=1mA VCB= 10 V , f=1MHz,IE=0 VCE= 6 V, I C= 0.1mA,f=1KHz,Rg=10K hFE(1) O Y G L 70-140 120-240 200-400 300-700 Any changing of specification will not be informed individual Page 1 of 2 2SC5343 NPN Transistor Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Plastic-Encapsulate Transistors 2SC5343 Any changing of specification will not be informed individual Page 2 of 2