SECOS 2SC5343

2SC5343
NPN Transistor
Elektronische Bauelemente
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
3.5 ±0.2
4.55±0.2
* Excellent hFE Linearity
: hFE(2)=100(Typ) at VCE=6V,IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)
+0.2
1.25–0.2
1 2 3
2.54 ±0.1
14.3 ±0.2
* Low Noise: NF=1Db(Typ). At f=1KHz
1: Emitter
2: Collector
3: Base
0.43 +0.08
–0.07
0.46 +0.1
–0.1
ABSOLUTE MAXIMUM RATINGS
(1.27 Typ.)
4.5±0.2
FEATURES
o
Ta=25 C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
50
Collector Current
150
V
V
mA
50
mA
IC
IB
PD
TJ,Tstg
5
Base Current-Continuous
Total Power Dissipation
0.2
-55~+150
Junction and Storage Temperature
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Emitter-Base Cutoff Current
Symbol
B(BR)CBO
B(BR)CEO
B(BR)EBO
I CBO
I EBO
Collector Saturation Voltage
VCE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Min
60
50
5
-
DC Current Gain
hFE1
Gain-Bandwidth Product
Output Capacitance
fT
Cob
70
80
-
Noise Figure
NF
-
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Typ.
-
Max
-
Unit
V
V
V
0.1
0.1
0.1
-
0.25
700
3.5
uA
uA
V
MH z
pF
-
10
dB
Test Conditions
I C=100µA,IE=0
I C=10mA,IB=0
I E=10µA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
I C=100mA,IB=10mA
VCE= 6 V, I C= 2mA
VCE= 10 V, IC=1mA
VCB= 10 V , f=1MHz,IE=0
VCE= 6 V, I C= 0.1mA,f=1KHz,Rg=10K
hFE(1)
O
Y
G
L
70-140
120-240
200-400
300-700
Any changing of specification will not be informed individual
Page 1 of 2
2SC5343
NPN Transistor
Elektronische Bauelemente
Typical Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Plastic-Encapsulate Transistors
2SC5343
Any changing of specification will not be informed individual
Page 2 of 2