2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB(Typ.),10dB (Max.) Base L 3 Complementary to 2SC2712. 1 Small Package. 1 Top View V 2 B S 2 Emitter G C (MAXIMUM RATINGS* TA=25 C ) H D O Symbol K Parameter J Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PD Total Device Dissipation 150 mW TJ, Tstg Junction and Storage Temperature ℃ -55~125 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Symbol Parameter Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100u A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-2mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF 70 400 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA -0.3 80 MHz VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ 7 pF 10 dB hFE O Y GR(G) Range 70-140 120-240 200-400 Marking SO SY SG Rank http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A V Any changing of specification will not be informed individual Page 1 of 2 2SA1162 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A PNP Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 2 of 2