DTC144TE / DTC144TUA DTC144TCA / DTC144TSA / DTC144TM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. DTC144TE (SOT-523) DTC144TUA (SOT-323) Addreviated symbol：06 Addreviated symbol：06 DTC144TM (SOT-723) DTC144TCA (SOT-23) Addreviated symbol：06 Addreviated symbol：06 EQUIVALENT CIRCUIT DTA143TSA (TO-92S) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limits (DTC144T□) Parameter Symbol Collector-Base Voltage V(BR)CBO 50 V Collector-Emitter Voltage V(BR)CEO 50 V Emitter-Base Voltage V(BR)EBO 5 Collector Current IC 100 Collector Dissipation PC Junction & Storage temperature http://www.SeCoSGmbH.com/ 08-Nov-2011 Rev. A TJ, TSTG M 100 E 150 UA CA SA Unit mA 200 150, -55~150 300 mW °C Any changes of specification will not be informed individually. Page 1 of 2 DTC144TE / DTC144TUA DTC144TCA / DTC144TSA / DTC144TM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 50 - - V IC=50µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=50µA, IC=0 Collector cut-off current ICBO - - 0.5 µA VCB=50V, IE=0 Emitter cut-off current IEBO - - 0.5 µA VEB=4V, IC=0 VCE(sat) - - 0.3 V IC=5mA, IB=0.5mA DC current transfer ratio hFE 100 300 600 Input resistance R1 32.9 47 61.1 KΩ Transition frequency fT 250 - - MHz Collector-emitter saturation voltage http://www.SeCoSGmbH.com/ 08-Nov-2011 Rev. A Test Conditions VCE=5V, IC=1mA VO=10V, IE= -5mA, f=100MHz Any changes of specification will not be informed individually. Page 2 of 2