2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L High Voltage：VCEO= -160V Large Continuous Collector Current Capability Complementary to 2SC2383 G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE Product-Rank 2SA1013-R Range 60~120 A 2SA1013-O D 2SA1013-Y 100~200 REF. A B C D E F G H J K B 160~320 K E C F Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -160 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.9 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -160 - - V Test Conditions Collector-Emitter Breakdown Voltage V(BR)CEO -160 - - V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V IE = -10µA, IC = 0 IC = -100µA, IE = 0 Collector Cut-off Current ICBO - - -1 µA VCB = -150V, IE = 0 Emitter Cut-off Current IEBO - - -1 µA VEB = -6V, IC = 0 hFE 60 - 320 VCE(sat) - - -1.5 V IC = -500mA, IB = -50mA VCE = -5V, IC = -5mA DC Current Gain Collector to Emitter Saturation Voltage VCE = -5V, IC = -200mA Base-Emitter Voltage VBE - - -0.75 V Transition Frequency fT 15 - - MHz COb - - 35 pF Collector Output Capacitance http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B VCE = -5V, IC = -200mA VCB = -10V, IE = 0, f = 1 MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA1013 Elektronische Bauelemente -1A, -160V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2