SECOS SEF103M

SEF101M~SEF107M
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
FEATURES
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SOD-123M
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application
in order to optimize board space.
High current capability.
Fast switching for high efficiency.
Glass passivated chip junction.
A
B
F
D
MECHANICAL DATA
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Case: Molded plastic, SOD-123M / Mini SMA
Epoxy: UL94-V0 rated flame retardant
Terminals: Plated terminals, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band
Weight: 0.018 gram (Approximately)
C
E
E
Millimeter
REF.
MARKING CODE
A
Part Number
Marking Code
Part Number
Marking Code
SEF101M
SEF102M
SEF103M
SEF104M
H1
H2
H3
H4
SEF105M
SEF106M
SEF107M
H5
H6
H7
Millimeter
REF.
Min.
Max.
Min.
Max.
3.50
3.90
D
3.60 (Max.)
B
1.40
1.80
E
0.80 (Typ.)
C
1.30
1.70
F
0.30 (Typ.)
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOD-123M
2.5K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Part Number
Parameter
Symbol
SEF
101M
SEF
102M
SEF
103M
SEF
104M
SEF
105M
SEF
106M
SEF
107M
Unit
Repetitive Peak
Reverse Voltage (Max.)
VRRM
50
100
200
400
600
800
1000
V
RMS Voltage (Max.)
VRMS
35
70
140
280
420
560
700
V
VR
50
100
200
400
600
800
1000
V
Continuous Reverse Voltage (Max.)
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
SEF101M~SEF107M
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part Number
Parameter
Symbol
SEF
101M
SEF
102M
SEF
103M
SEF
105M
1.3
SEF
106M
1.7
SEF
107M
Unit
Testing
Condition
Forward Voltage (Max.)
VF
Average Forward
Rectified Current (Max.)
IO
1
A
Ambient
Temperature =50°C
Forward Surge Current
IFSM
30
A
8.3ms single half
sine-wave
superimposed on rated
load (JEDEC method)
DC Reverse Current at
Rated DC Blocking Voltage
(Max.)
Thermal Resistance
Junction to Ambient (Typ.)
Diode Junction Capacitance
1
SEF
104M
5
IR
V
A
150
RJA
42
°C/W
(Typ.)
Storage and Operating
Temperature Range
CJ
20
pF
TSTG, TJ
-65 ~ 175, -55 ~ 150
°C
Reverse recovery time
TRR
50
75
VR=VRRM, TA=25°C
VR=VRRM,TA=100°C
f=1MHz and applied 4V
DC reverse voltage
nS
Note:
1.
Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A.
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
SEF101M~SEF107M
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3