SEF101M~SEF107M VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free FEATURES SOD-123M Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Fast switching for high efficiency. Glass passivated chip junction. A B F D MECHANICAL DATA Case: Molded plastic, SOD-123M / Mini SMA Epoxy: UL94-V0 rated flame retardant Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026. Polarity: Indicated by cathode band Weight: 0.018 gram (Approximately) C E E Millimeter REF. MARKING CODE A Part Number Marking Code Part Number Marking Code SEF101M SEF102M SEF103M SEF104M H1 H2 H3 H4 SEF105M SEF106M SEF107M H5 H6 H7 Millimeter REF. Min. Max. Min. Max. 3.50 3.90 D 3.60 (Max.) B 1.40 1.80 E 0.80 (Typ.) C 1.30 1.70 F 0.30 (Typ.) PACKAGE INFORMATION Package MPQ LeaderSize SOD-123M 2.5K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.) Part Number Parameter Symbol SEF 101M SEF 102M SEF 103M SEF 104M SEF 105M SEF 106M SEF 107M Unit Repetitive Peak Reverse Voltage (Max.) VRRM 50 100 200 400 600 800 1000 V RMS Voltage (Max.) VRMS 35 70 140 280 420 560 700 V VR 50 100 200 400 600 800 1000 V Continuous Reverse Voltage (Max.) http://www.SeCoSGmbH.com/ 09-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 3 SEF101M~SEF107M VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part Number Parameter Symbol SEF 101M SEF 102M SEF 103M SEF 105M 1.3 SEF 106M 1.7 SEF 107M Unit Testing Condition Forward Voltage (Max.) VF Average Forward Rectified Current (Max.) IO 1 A Ambient Temperature =50°C Forward Surge Current IFSM 30 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) DC Reverse Current at Rated DC Blocking Voltage (Max.) Thermal Resistance Junction to Ambient (Typ.) Diode Junction Capacitance 1 SEF 104M 5 IR V A 150 RJA 42 °C/W (Typ.) Storage and Operating Temperature Range CJ 20 pF TSTG, TJ -65 ~ 175, -55 ~ 150 °C Reverse recovery time TRR 50 75 VR=VRRM, TA=25°C VR=VRRM,TA=100°C f=1MHz and applied 4V DC reverse voltage nS Note: 1. Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A. http://www.SeCoSGmbH.com/ 09-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 SEF101M~SEF107M Elektronische Bauelemente VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 09-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 3