SECOS SMG2310N

SMG2310N
2.2A, 30V, RDS(ON) 65 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
A
L
3
3
C B
Top View
1
1
2
K
E
2
D
FEATURES



F
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SC-59
3K
7’ inch
H
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±8
V
2.2
A
1.7
A
IDM
10
A
IS
0.45
A
0.5
W
0.42
W
-55 ~ 150
°C
ID @ TA=25°C
Continuous Drain Current 1
ID
ID @ TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction)
1
PD @ TA=25°C
Power Dissipation 1
PD @ TA=70°C
Operating Junction and Storage Temperature Range
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes:
1
2
t ≦ 5 sec
Steady State
RJA
250
285
°C / W
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2310N
2.2A, 30V, RDS(ON) 65 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Switch Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
30
-
-
Gate-Body Leakage
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
10
VGS=0, ID=250μA
nA
μA
VDS=0, VGS= ±8V
VDS=24V, VGS=0
VDS=24V, VGS=0, TJ=55°C
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
1
VGS(th)
0.43
0.7
1
V
VDS=VGS, ID=250μA
ID(on)
10
-
-
A
VDS=5V, VGS=4.5V
-
54
65
-
80
99
-
70
82
gfs
-
13
-
S
VDS=5V, ID=2.2A
VSD
-
0.65
1.2
V
IS=0.45A, VGS=0
RDS(ON)
Dynamic
VGS=4.5V, ID=2.2A
mΩ
VGS=4.5V, ID=2.2A, TJ=55°C
VGS=2.5V, ID=2A
2
Total Gate Charge
Qg
-
7
9
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
1.9
-
nC
VDS=10V, VGS=4.5V,
ID= 2.2A
nS
VDS=10V, VGEN=4.5V,
RG=6, ID=1A
Switching
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
4
11
Tr
-
11
19
Td(off)
-
18
30
Tf
-
5
10
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2310N
Elektronische Bauelemente
2.2A, 30V, RDS(ON) 65 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2310N
Elektronische Bauelemente
2.2A, 30V, RDS(ON) 65 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4