SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES G H Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. F Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ESD Protection Diode 2KV MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Symbol Rating Unit VDS VGS -20 ±8 -4.5 -3.6 -10 1.25 0.8 -55 ~ 150 V V ID IDM TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Range 1 PD TJ, TSTG A A W °C Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady-State RθJA 100 150 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static VGS(th) -0.7 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 -10 - - - - 43 - - 54 - - 120 Gate-Threshold Voltage On-State Drain Current 1 Drain-Source On-Resistance ID(ON) 1 RDS(ON) μA A VDS = -16V, VGS= 0V VDS = -16V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -3.6A mΩ VGS= -2.5V, ID = -3.1A VGS= -1.8V, ID = -2.7A Forward Transconductance 1 gFS - 12 - S VDS= -5V,,ID = -1.25A Diode Forward Voltage VSD - -0.60 - V IS= -0.46A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 12.0 - Gate-Source Charge Qgs - 2.0 - Gate-Drain Charge Qgd - 2.0 - Turn-On Delay Time Td(ON) - 6.5 - Tr - 20 - Td(OFF) - 31 - Tf - 21 - Rise Time Turn-Off Delay Time Fall Time nC ID= -2.4A VDS= -5V VGS= -4.5V nS IL= -1A, VDD= -10V VGEN= -4.5V RG= 6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2305PE Elektronische Bauelemente -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4