SID9971
25A, 60V,RDS(ON)36 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
TO-251
Description
2.3±0.1
6.6±0.2
5.3±0.2
The SID9971 provide the designer with the best combination
0.5±0.05
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial
7.0±0.2
5.6±0.2
surface mount applications and suited for low voltage applications
such as DC/DC converters.
1.2±0.3
0.75±0.15
7.0±0.2
Features
* Low On-Resistance
0.6±0.1
* Simple Drive Requirement
0.5±0.1
2.3REF.
G
D
S
Dimensions in millimeters
D
Marking Code: 9971
XXXX(Date Code)
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
60
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
25
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
16
A
IDM
80
A
39
W
0.31
W/ C
-55~+150
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
C
Thermal Data
Parameter
Symbol
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Ratings
Unit
3.2
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SID9971
25A, 60V,RDS(ON)36 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
60
_
BVDS/ Tj
_
0.05
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Gate-Drain ("Miller") Charge
Qgd
Input Capacitance
6
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
o
36
30
Qgs
Fall Time
V/ C
18
Gate-Source Charge
Turn-off Delay Time
_
50
_
Rise Time
V
_
Qg
_
_
11
_
9
_
24
_
26
_
7
_
1700
nC
ID=18A
VDS=48V
VGS= 4.5V
VDD=30V
ID=18A
nS
VGS=10V
RG=3.3Ω
S
VDS=10V, ID=18A
Max.
Unit
Gfs
_
17
Symbol
Min.
Typ.
Forward Transconductance
VGS=10V, ID=18A
_
110
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
pF
_
Crss
o
Reference to 25 C, ID=1mA
VGS=0V
VDS=25V
_
Coss
VGS=0V, ID=250uA
VGS=4.5V, ID=12A
2700
160
Output Capacitance
mΩ
Test Condition
RD=1.67Ω
_
_
Unit
_
_
Total Gate Charge2
Turn-on Delay Time2
Max.
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
37
_
Reverse Recovery Change
Qrr
38
_
_
1.2
Test Condition
V
IS=25 A, VGS=0V.
nS
IS=18A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SID9971
Elektronische Bauelemente
25A, 60V,RDS(ON)36 mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v. s.
J unction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SID9971
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
25A, 60V,RDS(ON)36 mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4