SSM9915
6.2A, 20V,RDS(ON) 50mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Description
SOT-223
The SSM9915 provide the designer with the best
combination of fast switching,low on-resistance and
cost-effectiveness.
Features
*
*
*
*
Simple Drive Requirement
Fast Switching
Low Gate Charge
RoHS Compliant
REF.
D
Date Code
A
C
D
E
I
H
9 9 1 5
G
G
D
S
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
20
V
VGS
±12
V
6.2
A
ID@TA=70 C
5.0
A
IDM
30
A
3.2
W
0.025
W / oC
o
1
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 oC
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
40
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM9915
6.2A, 20V,RDS(ON) 50mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
20
_
BVDS/ Tj
_
VGS(th)
0.5
_
1.2
V
IGSS
_
_
±100
nA
VGS=±12V
_
_
1
uA
VDS=20V,VGS=0
_
_
25
uA
VDS=16V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=70 C)
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Gate-Drain ("Miller") Charge
Qgd
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
50
8
Qgs
Fall Time
V/ C
5
Gate-Source Charge
Turn-off Delay Time
_
80
_
Rise Time
V
_
Qg
_
_
1
_
2
_
8
_
55
_
10
_
3
_
360
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VGS=4.5V, ID=6A
VGS=2.5V, ID=4 A
nC
ID=10A
VDS=16V
VGS= 4.5V
VDD=10V
ID=10A
nS
VGS=5 V
RG=3.3Ω
RD=1 Ω
580
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
50
Forward Transconductance
Gfs
_
13
_
Gate Resistance
Rg
_
0.78
_
70
Unit
_
_
Total Gate Charge2
Turn-on Delay Time2
0.03
Max.
pF
VGS=0V
VDS=20V
S
VDS=10V, ID=5A
Ω
f=1.0MHz
f=1.0MHz
_
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time2
Trr
_
17
_
Reverse Recovery Change
Q rr
9
_
_
1.3
Unit
Test Condition
V
IS=2.5A, VGS=0V.
nS
IS=10A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3. t ≦10sec.Surface mounted on 1 in2copper pad of FR4 board.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM9915
Elektronische Bauelemente
6.2A, 20V,RDS(ON) 50mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSM9915
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
6.2A, 20V,RDS(ON) 50mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4