SSG9478
4.8A, 60V,RDS(ON) 64mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG9478 provide the designer with the best Combination of fast switching,
45
o
0.375 REF
6.20
5.80
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
0.25
The SOP-8 is universally preferred for all commercial
3.80
4.00
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
1.27Typ.
0.35
0.49
4.80
5.00
0.100.25
1.35
1.75
o
0
o
8
Features
Dimensions in millimeters
* Simple drive requirement
D
D
D
D
* Low gate charge
8
7
6
5
* Fast switching Characteristic
Date Code
D
9478SC
G
1
2
3
4
S
S
S
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
3
o
ID@TA=25 C
3
o
ID@TA=70 C
1
IDM
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Ratings
Unit
60
V
±25
V
4.8
A
3.8
A
30
A
2.5
W
0.02
W / oC
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Max.
Rthj-a
Ratings
50
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG9478
4.8A, 60V,RDS(ON) 64mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
60
_
_
V
BVDS/ Tj
_
0.06
_
V/ C
VGS(th)
1.0
_
3.0
IGSS
_
_
_
_
_
_
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
±100
nA
VGS=± 25V
1
uA
VDS=60V,VGS=0
_
25
uA
VDS=48V,VGS=0
_
64
Qg
_
9
15
Gate-Source Charge
Qgs
_
2
_
Gate-Drain ("Miller") Charge
Qgd
5
_
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
8
_
Tr
_
6
_
Td(Off)
_
20
_
Tf
_
4
_
_
710
1140
80
_
51
_
_
Coss
_
mΩ
VGS=10V, ID=4A
VGS=4.5V, ID=3A
72
Td(ON)
Ciss
Output Capacitance
_
o
Reference to 25 C,ID=1mA
VDS=VGS, ID=250uA
_
2
VGS=0V, ID=250uA
V
_
Total Gate Charge
o
Test Condition
nC
ID=4A
VDS=48V
VGS=4.5V
VDD=30V
ID=1A
nS
VGS=10V
RG=3.3 Ω
RD=30 Ω
pF
VGS=0V
VDS=25V
S
VDS=10V, ID=4A
Ω
f=1.0MHz
f=1.0MHz
Crss
_
Forward Transconductance
Gfs
_
6
Gate Resistance
Rg
_
2.1
_
Min.
Typ.
Max.
Unit
Test Condition
_
_
1.2
V
IS=2A, VGS=0V.
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Symbol
VDS
2
Reverse Recovery Charge
Trr
Qrr
_
_
28
36
_
_
nS
nC
Is=4A, VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG9478
Elektronische Bauelemente
4.8A, 60V,RDS(ON) 64mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSG9478
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
4.8A, 60V,RDS(ON) 64m Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4