SMG2309
-3.7A, -30V,RDS(ON) 75mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SC-59
A
L
The SMG2309 provide the designer with the best
combination of fast switching, low on-resistance
S
and cost-effectiveness.
2
The SMG2309 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
3
Top View
B
1
D
G
Features
J
C
* Simple drive requirement
K
H
* Small package outline
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2309
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
-3.7
A
o
ID@TA=70 C
-3.0
A
IDM
-12
A
1.38
W
0.01
W/ C
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
-30
±20
ID@TA=25 C
Pulsed Drain Current
Unit
o
VGS
3
Ratings
Tj, Tstg
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2309
-3.7A, -30V,RDS(ON) 75mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 oC)
Drain-Source Leakage Current (Tj=70 oC)
2
Static Drain-Source On-Resistance
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-30
_
_
V
BVDS/ Tj
_
-0.02
_
V/ oC
VGS(th)
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
75
IDSS
RDS(ON)
_
_
120
Qg
_
5
8
Gate-Source Charge
Qgs
_
1
_
Gate-Drain ("Miller") Charge
Qgd
3
_
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
8
_
Tr
_
5
_
Td(Off)
_
20
_
Tf
_
7
_
_
412
660
91
_
62
_
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
mΩ
Test Condition
VGS=0V, ID=-250uA
Reference to 25 oC,ID=-1mA
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2.6A
nC
ID=-3A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15Ω
pF
VGS=0V
VDS=-25V
VDS=-10V, ID=-3A
f=1.0MHz
Crss
_
Gfs
_
5.0
_
S
Symbol
Min.
Typ.
Max.
Unit
Test Condition
_
_
-1.2
V
IS=-1.2A, VGS=0V.
_
20
_
nS
Is=3.0A, VGS=0
Source-Drain Diode
Parameter
Forward On Voltage
VSD
2
Reverse Recovery Time
2
Reverse Recovery Charge
Trr
Qrr
_
15
_
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2309
-3.7A, -30V,RDS(ON) 75mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SMG2309
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-3.7A, -30V,RDS(ON) 75m Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4