SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 2 K E 2 FEATURES D Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board Space. Fast switching speed. High performance trench technology. F G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Symbol Ratings Unit VDS VGS -20 ±12 -3.6 -2.9 -10 ±0.46 1.25 0.8 -55 ~ 150 V V A A A A W W °C 100 166 °C / W ID IDM IS PD @ TA=25°C PD @ TA=70°C Power Dissipation 1 PD Tj, Tstg Thermal Resistance Data Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 t ≦ 5 sec Steady State RJA Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Symbol Min. Typ. Max. Unit VGS(th) -0.7 - - V VDS=VGS, ID= -250uA IGSS - - ±100 nA VDS= 0V, VGS= ±8V - - -1 - - -10 -10 - - - - 55 - - 89 - - 200 IDSS ID(on) RDS(ON) Test Conditions VDS= -16V, VGS= 0V μA VDS= -16V, VGS= 0V, TJ= 55°C A VDS = -5V, VGS= -4.5V VGS= -4.5V, ID= -3.6A mΩ VGS= -2.5V, ID= -2.8A VGS= -1.8V, ID= -1.8A Forward Transconductance 1 gfs - 12 - S VDS= -5V, ID= -3.6A Diode Forward Voltage VSD - -0.6 - V IS= -0.46A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 16.7 - Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 1.9 - Turn-on Delay Time Td(on) - 9 - Tr - 4 - Rise Time Turn-off Delay Time Fall Time Td(off) - 25 - Tf - 20 - nC VDS= -5V, VGS= -4.5V, ID= -3.6A nS VDD= -10V, VGEN= -4.5V, RG= 6, IL= -1A Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2325P Elektronische Bauelemente -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4