SSPS7332N ±17 A , 30 V , RDS(ON) 13.5 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B D C FEATURES θ Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E A b d g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F PACKAGE INFORMATION Package MPQ DFN3x3-8PP G Top View Leader Size 3K REF. A B C D E F G 13 inch Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) REF. θ b d e g MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA=25°C TA=70°C 2 Ratings Unit VDS 30 V VGS ±20 V 17 A 11 A 50 A ID IDM Continuous Source Current (Diode Conduction) Total Power Dissipation Symbol 1 1 TA =25°C TA =70°C Operating Junction & Storage Temperature Range IS PD TJ, TSTG 2.3 A 3.5 W 2.0 W -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec RθJC 25 °C / W t ≦ 5 sec RθJA 50 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSPS7332N ±17 A , 30 V , RDS(ON) 13.5 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS=20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) µA - - 25 20 - - - - 13.5 VDS=5V, VGS=10V VGS=10V, ID=10A - 20 gfs - 40 - S VDS=15V, ID=10A VSD - 0.7 - V IS=2.3A, VGS=0 VGS=4.5V, ID=8A 2 Qg - 12.5 - Gate-Source Charge Qgs - 2.6 - Gate-Drain Charge Qgd - 4.6 - Turn-On Delay Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Fall Time A - Total Gate Charge Turn-Off Delay Time VDS=24V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS=24V, VGS=0 nC VDS=15V VGS=4.5V ID=10A nS VDD=25V ID=1A VGEN=10V RL=25Ω Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSPS7332N Elektronische Bauelemente ±17 A , 30 V , RDS(ON) 13.5 mΩ Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4