SSG4520H N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L FEATURES D M Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones K G F Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. H J K L M N E Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. Top View PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Rating Symbol Unit N-CH P-CH Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V 6.6 -5.2 A 5 -3.8 A IDM 20 -20 A IS 2.2 -2.2 A Continuous Drain Current 1 Pulsed Drain Current TA = 25°C TA = 70°C 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG 2.1 W 1.3 W -55 ~ 150 °C 62.5 °C / W 110 °C / W Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 1 of 6 SSG4520H N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) N 1 - - P -1 - - N - - ±100 P - - ±100 N - - 1 P - - -1 N 10 - - P -10 - - - - 47 - - 55 N Drain-Source On-Resistance 1 RDS(ON) P Diode Forward Voltage VSD Forward Transconductance 1 gfs - - 79 - - 110 N 0.7 P -0.73 N - 10 P - 10 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Rise Time Turn-Off Delay Time Fall Time Tr Td(off) Tf N 439 P 683 N 78 P 90 N 68 P 75 VDS=VGS, ID=250μA V VDS=VGS, ID= -250μA nA μA - VDS=0, VGS= -8V VDS=8V, VGS=0 VDS= -8V, VGS=0 VDS=5V, VGS=4.5V A VDS= -5V, VGS= -4.5V VGS=4.5V, ID=5.3A mΩ VGS=2.5V, ID=5A VGS= -4.5V, ID= -4.2A VGS= -2.5V, ID= -3.8A VGS=0, IS=1.1A V - VDS=0, VGS=8V VGS=0, IS= -1.1A VDS=10V, ID=5.3A S VDS= -10V, ID= -4.2A 2 N-Channel VDS=15V, VGS=0, f=1MHz pF P-Channel VDS= -15V, VGS=0, f=1MHz N - 6 - P - 11 - N - 0.9 - P - 2.8 - N - 2.1 - P - 2.7 - N - 7 - P - 10 - N - 24 - P - 20 - N - 35 - P - 49 - N - 19 - P - 21 - N-Channel ID=5.3A, VDS=10V, VGS=4.5V nC P-Channel ID= -4.2A, VDS= -10V, VGS= -4.5V N-Channel VDD=10V, VGEN=4.5V ID=5.3A, RGEN=6Ω, RL=1.8Ω nS P-Channel VDD= -10V, VGEN= -4.5V ID= -4.2A, RGEN=6Ω, RL=2.3Ω Notes: 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 2 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 3 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 4 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 5 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Jan-2012 Rev. D Any changes of specification will not be informed individually. Page 6 of 6