SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones B L D M A C N FEATURES J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology H Package MPQ LeaderSize SOP-8 2.5K 13’ inch G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. A B C D E F G PACKAGE INFORMATION K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol N- Ch P- Ch Unit VDS 30 -30 V VGS 20 -20 V ID @ TA = 25°C 10 -8.5 A ID @ TA = 70°C 8.1 -6.8 A IDM ±50 ±50 A Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 IS 2.3 -2.1 A PD @ TA = 25°C 2.1 2.1 W PD @ TA = 70°C 1.3 1.3 Operating Junction & Storage Temperature Range TJ, TSTG W -55 ~ 150 °C 62.5 °C / W 110 °C / W Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦ 10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 6 SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) N 30 - - P N -30 1 - - P -1 - - N - - ±100 P - - ±100 N - - 1 P N 20 - -1 - P -50 - - - - 16 N Drain-Source On-Resistance 1 - - 20 - - 23 N - 40 33 - P - 31 - RDS(ON) P Forward Transconductance 1 gfs Dynamic Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Rise Time Turn-Off Delay Time Fall Time Tr Td(off) Tf N - 12 V V nA μA A VGS= 0V, ID= 250μA VGS= 0V, ID= -250μA VDS= VGS, ID= 250μA VDS= VGS, ID= -250μA VDS= 0V, VGS= 20V VDS= 0V, VGS= -20V VDS= 24V, VGS= 0V VDS= -24V, VGS= 0V VDS= 5V, VGS= 10V VDS= -5V, VGS= -10V VGS= 10V, ID= 10A mΩ S VGS= 4.5V, ID= 8.4A VGS= -10V, ID= -8.5A VGS= -4.5V, ID= -6.8A VDS= 15V, ID= 10A VDS= -15V, ID= -9.5A 2 - P - 13 - N - 3.3 - P - 5.8 - N - 4.5 - P N - 12 20 - P - 15 - N - 9 - P - 16 - N - 70 - P N - 62 20 - P - 46 - nC nS N-Channel ID= 10A, VDS= 15V, VGS= 4.5V P-Channel ID= -10A, VDS= -15V, VGS= -4.5V N-Channel VDD= 15V, VGS= 10V ID= 1A, RGEN= 25Ω P-Channel VDD= -15V, VGS= -10V ID= -1A, RGEN= 15Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 6 SSG4502C Elektronische Bauelemente N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 6 SSG4502C Elektronische Bauelemente N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 6 SSG4502C Elektronische Bauelemente N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 5 of 6 SSG4502C Elektronische Bauelemente N-Ch: 10 A, 30 V, RDS(ON) 16 m P-Ch: -8.5 A, -30 V, RDS(ON) 23 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 6 of 6