SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L FEATURES D M Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast Switch Speed. High performance trench technology. A C N J H APPLICATION G REF. A B C D E F G DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. K F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S1 PACKAGE INFORMATION E D1 Package MPQ Leader Size G1 D1 SOP-8 2.5K 13 inch S2 D2 G2 D2 MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings N-Ch P-Ch Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6.9 -5.2 A 5.4 -6.8 A IDM 20 -20 A IS 1.3 -1.3 A 2.1 2.1 W 1.3 1.3 W Continuous Drain Current TA=25°C 1 ID TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA=25°C 1 TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG -55~150 °C Thermal Resistance Ratings Maximum Junction-ambient Maximum Junction-Case 1 1 t<=5 sec RθJA 60 °C / W t<=5 sec RθJC 40 °C / W Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 7 SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω Elektronische Bauelemente N-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= 8V, VDS=0 Drain-Source Leakage Current IDSS - - 1 µA VDS=24V, VGS=0 ID(ON) 20 - - A VDS=5V, VGS=10V - - 31 On-State Drain Current 1 1 Static Drain-Source On-Resistance Forward Transconductance 1 RDS(ON) gfs VGS=10V, ID=6.9A mΩ - - 40 VGS=4.5V, ID=6A - 25 - S nC ID=6.9A VDS=15V VGS=10V nS VDD=15V VGS=10V ID=1A RGEN=6Ω VDS=15V, ID=6.9A Dynamic Total Gate Charge Qg - 4.0 Gate-Source Charge Qgs - 1.1 - Gate-Drain (“Miller”) Change Qgd - 1.4 - Td(on) - 8 - Tr - 5 - Td(off) - 23 - Tf - 3 - Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 7 SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω Elektronische Bauelemente P-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= -8V, VDS=0 Drain-Source Leakage Current IDSS - - -1 µA VDS= -24V, VGS=0 ID(ON) -20 - - A VDS= -5V, VGS= -10V - - 52 On-State Drain Current 1 1 Static Drain-Source On-Resistance Forward Transconductance 1 RDS(ON) gfs VGS= -10V, ID= -5.2A mΩ - - 80 VGS= -4.5V, ID= -4.2A - 10 - S nC ID= -5.2A VDS= -15V VGS= -10V nS VDD= -15V VGS= -10V ID= -1A RGEN=6Ω VDS= -15V, ID= -5.2A Dynamic Total Gate Charge Qg - 10 Gate-Source Charge Qgs - 2.2 - Gate-Drain (“Miller”) Change Qgd - 1.7 - Td(on) - 10 - Tr - 2.8 - Td(off) - 53.6 - Tf - 46 - Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes: 1. Pulse test: PW ≦ 300us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 7 SSG4512CE Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 7 SSG4512CE Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 5 of 7 SSG4512CE Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 6 of 7 SSG4512CE Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ Ω P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ Ω CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 7 of 7