SECOS SSG4890N

SSG4890N
1.9 A, 150 V, RDS(ON) 700 m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
FEATURES




A
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
N
J
H
PACKAGE INFORMATION
REF.
Package
MPQ
LeaderSize
SOP-8
2.5K
13’ inch
C
A
B
C
D
E
F
G
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
K
E
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
D
G
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VDS
150
V
VGS
±20
V
ID @ TA = 25°C
5.2
A
IDM
20
A
IS
1.6
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction) 1
Power Dissipation
1
PD @ TA = 25°C
2.1
W
TJ, TSTG
-55 ~ 150
°C
40
°C / W
80
°C / W
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State
RθJA
Notes
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SSG4890N
1.9 A, 150 V, RDS(ON) 700 m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID= 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±8V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
Diode Forward Voltage
1
RDS(ON)
-
-
1
μA
VDS= 120V, VGS= 0V
-
-
10
μA
VDS= 120V, VGS= 0V, TJ= 55°C
10
-
-
A
-
-
700
-
-
1200
gfs
-
11.3
-
S
VDS= 10V, ID= 1.9A
-
0.75
-
V
IS= 1.6A, VGS= 0V
Dynamic
2
Qg
-
7.0
-
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
2.0
-
Turn-On Delay Time
Td(on)
-
8
-
Tr
-
24
-
Td(off)
-
35
-
Tf
-
10
-
Turn-Off Delay Time
Fall Time
VGS= 5.5V, ID= 1.6A
VSD
Total Gate Charge
Rise Time
mΩ
VDS= 5V, VGS= 10V
VGS= 10V, ID= 1.9A
nC
ID= 1.9A
VDS= 10V
VGS= 5.5V
nS
VDD= 10V
ID= 1A
VGEN= 4.5V
RL= 15Ω
Notes
1
Pulse test:PW ≦ 300μs duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SSG4890N
Elektronische Bauelemente
1.9 A, 150 V, RDS(ON) 700 m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SSG4890N
Elektronische Bauelemente
1.9 A, 150 V, RDS(ON) 700 m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4