SSG4890N 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. N J H PACKAGE INFORMATION REF. Package MPQ LeaderSize SOP-8 2.5K 13’ inch C A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit VDS 150 V VGS ±20 V ID @ TA = 25°C 5.2 A IDM 20 A IS 1.6 A Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 PD @ TA = 25°C 2.1 W TJ, TSTG -55 ~ 150 °C 40 °C / W 80 °C / W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Junction to Ambient a t ≦ 10 sec Steady State RθJA Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4890N 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID= 250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) - - 1 μA VDS= 120V, VGS= 0V - - 10 μA VDS= 120V, VGS= 0V, TJ= 55°C 10 - - A - - 700 - - 1200 gfs - 11.3 - S VDS= 10V, ID= 1.9A - 0.75 - V IS= 1.6A, VGS= 0V Dynamic 2 Qg - 7.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 2.0 - Turn-On Delay Time Td(on) - 8 - Tr - 24 - Td(off) - 35 - Tf - 10 - Turn-Off Delay Time Fall Time VGS= 5.5V, ID= 1.6A VSD Total Gate Charge Rise Time mΩ VDS= 5V, VGS= 10V VGS= 10V, ID= 1.9A nC ID= 1.9A VDS= 10V VGS= 5.5V nS VDD= 10V ID= 1A VGEN= 4.5V RL= 15Ω Notes 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4890N Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4890N Elektronische Bauelemente 1.9 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4