UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055(1.40) .047(1.20) 6 Features .026TYP (0.65TYP) 5 4 * Transistor elements are independent, 1 eliminating interference. (3) (2) R1 3 2 .014(0.35) .006(0.15) * Mounting cost and area can be cut in half. .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA114E and DTC114E transistors are built-in a SOT-363 package. 8 o 0 .018(0.46) .010(0.26) .006(0.15) .003(0.08) .087(2.20) .079(2.00) (1) .004(0.10) .000(0.00) R2 .043(1.10) .035(0.90) DT r1 DT r2 .039(1.00) .035(0.90) R2 R1 (4) (5) (6) Dimensions in inches and (millimeters) R1=R2=10K MARKING:D3 Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Power dissipation Pd 150(TOTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. Typ VI(off) VI(on) Max. 0.5 3 Unit Conditions VCC=5V ,IO=100μA V VO=0.3V ,IO=10mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B VO=5V,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Any changing of specification will not be informed individual Page 1 of 2 UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente DTr1 (NPN) 10m 5m VO=0.3V 20 10 Ta=−40˚C 25˚C 100˚C 5 2 1 500m 500µ 1m 2m Ta=100˚C 25˚C −40˚C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 5m 10m 20m 50m 100m Ta=100˚C 25˚C −40˚C 200 100 50 20 10 5 2 0.5 OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) VO=5V 500 500µ 200m 100m 100µ 200µ 1k VCC=5V 2m 1m OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 DC CURRENT GAIN : GI 100 1 1.5 2 2.5 3 1 100µ 200µ 500µ1m 2m Fig.3 DC current gain vs. output current Fig.2 Output current vs. input voltage (OFF characteristics) 1 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100˚C 25˚C −40˚C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 (PNP) −10m −5m VO=−0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −50 −20 −10 −5 −2 Ta=−40˚C 25˚C 100˚C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −2m −1m −500µ −100µ −50µ −20µ −10µ −5µ OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) 500 −200µ −2µ −1µ 0 −5m −10m −20m −50m −100m 1k −0.5 −1 −1.5 −2 −2.5 −3 Fig.6 Output current vs. input voltage (OFF characteristics) −1 OUTPUT VOLTAGE : VO (on) (V) −200m 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 INPUT VOLTAGE : VI (off) (V) −500m VO=−5V VCC=−5V Ta=100˚C 25˚C −40˚C DC CURRENT GAIN : GI −100 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current lO/lI=20 Ta=100˚C 25˚C −40˚C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B Any changing of specification will not be informed individual Page 2 of 2