UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features * Two DTC144T chips in a package o 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference. .053(1.35) .045(1.15) .096(2.45) .085(2.15) * Mounting cost and area can be cut in half. .018(0.46) .010(0.26) .014(0.35) .006(0.15) MARKING： H15 .006(0.15) .003(0.08) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50μA Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA Collector cut-off current ICBO 0.5 μA VCB=50V Emitter cut-off current IEBO 0.5 μA VEB=4V VCE(sat) 0.3 V IC=10mA,IB=1mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 32.9 Transition frequency fT http://www.SeCoSGmbH.com 01-Jan-2006 Rev. A 600 47 250 61.1 VCE=5V,IC=1mA KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Any changing of specification will not be informed individual Page 1 of 2 UMH15N Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor Typical Characteristics http://www.SeCoSGmbH.com 01-Jan-2006 Rev. A Any changing of specification will not be informed individual Page 2 of 2