UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055(1.40) .047(1.20) 8 o 0 .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA124E and DTC124E transistors are built-in a SOT-363 package. * Transistor elements are independent, .018(0.46) .010(0.26) eliminating interference. .014(0.35) .006(0.15) * Mounting cost and area can be cut in half. (3) (2) R1 .087(2.20) .079(2.00) (1) .006(0.15) .003(0.08) .004(0.10) .000(0.00) R2 .043(1.10) .035(0.90) DT r1 DT r2 .039(1.00) .035(0.90) R2 R1 (4) (5) (6) Dimensions in inches and (millimeters) R1=R2=22K MARKING:D2 Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 30 IC(MAX) -100 Power dissipation Pd 150(TOTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. Typ Max. VI(off) VI(on) 0.5 3 Unit VCC=5V ,IO=100μA V VO=0.2V ,IO=10mA Output voltage VO(on) 0.3 V Input current II 0.36 mA Output current IO(off) 0.5 µA DC current gain GI 56 Input resistance R1 15.4 22 28.6 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT http://www.SeCoSGmbH.com 01-Jan-2006 Rev. A Conditions IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Any changing of specification will not be informed individual Page 1 of 3 UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor DTr1 (NPN) http://www.SeCoSGmbH.com 01-Jan-2006 Rev. A Any changing of specification will not be informed individual Page 2 of 3 UMD2N Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jan-2006 Rev. A NPN-PNP built-in resistors Multi-Chip Digital Transistor Any changing of specification will not be informed individual Page 3 of 3